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IRFUC20 Dataheets PDF



Part Number IRFUC20
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFUC20 DatasheetIRFUC20 Datasheet (PDF)

iscN-Channel MOSFET Transistor IRFUC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 2.0 A IDM Drai.

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