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SiHLIZ44G Dataheets PDF



Part Number SiHLIZ44G
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHLIZ44G DatasheetSiHLIZ44G Datasheet (PDF)

Power MOSFET IRLIZ44G, SiHLIZ44G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5 V 66 12 43 Single 0.028 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling .

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Power MOSFET IRLIZ44G, SiHLIZ44G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5 V 66 12 43 Single 0.028 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRLIZ44GPbF SiHLIZ44G-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 5 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 518 µH, RG = 25 Ω, IAS = 30 A (see fig. 12c). c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. LIMIT 60 ± 10 30 21 120 0.32 400 48 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m Document Number: 91318 S09-0037-Rev. A, 19-Jan-09 www.vishay.com 1 IRLIZ44G, SiHLIZ44G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP. - MAX. 65 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 10 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 °C VGS = 5.0 V ID = 18 Ab VGS = 4.0 V ID = 15 Ab VDS = 25 V, ID = 18 Ab 60 - - V - 0.070 - V/°C 1.0 - 2.0 V - - ± 100 nA - - 25 µA - - 250 - - 0.028 Ω - - 0.039 22 - - S Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Ciss Coss Crss C VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 f = 1.0 MHz - 3300 - - 1200 - pF - 200 - - 12 - Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf - VGS = 5.0 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b - - - 66 - 12 nC - 43 VDD = 30 V, ID = 51 A, RG = 4.6 Ω, RD= 0.56 Ω, see fig. 10b - 17 - - 230 - ns - 42 - - 110 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 - nH - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 30 A - - 120 Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µsb 90 180 ns Qrr - 0.65 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91318 S09-0037-Rev. A, 19-Jan-09 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91318 S09-0037-Rev. A, 19-Jan-09 www.vishay.com 3 IRLIZ44G, SiHLIZ44G Vishay Siliconix F.


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