BLC10G18XS-552AVT

BLC10G18XS-552AVT Power LDMOS transistor Rev. 1 — 31 October 2019 Product data sheet 1. Product profile 1.1 General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 30 49.5 16.8 48.3 32.1 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distortion capability  Internally matched for ease of use  Integrated ESD protection  For RoHS compliance see the product details on the Ampleon website 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1880 MHz frequency range BLC10G18XS-552AVT Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 Pinning Description drain2 (peak) drain1 (main) gate1 (main) gate2 (peak) source video decoupling (peak) video decoupling (main) [1] Conne...