Document
AUTOMOTIVE GRADE
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Features NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Lead-Free, RoHS Compliant Automotive Qualified *
C
G E
n-channel
VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A
Equivalent MOSFET Parameters
RCE(on) typ. = 84m ID (FET equivalent) = 35A
C
Applications PFC and ZVS SMPS Circuits DC/DC Converter Charger
Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz
G Gate
GC E TO-247AD AUIRGP35B60PD-E
C Collector
E Emitter
Base Part Number AUIRGP35B60PD-E
Package Type TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number AUIRGP35B60PD-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current (Ref. Fig. C. T.4)
ILM
Clamped Inductive Load Current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFSM
Maximum Repetitive Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
V
60
34
120
120
A
40
15
60
±20
V
308 123
W
-55 to +150
°C
300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA
Thermal Resistance Junction-to-Case (each IGBT) Thermal Resistance Junction-to-Case (each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
* Qualification standards can be found at www.infineon.com
Min. ––– ––– ––– –––
–––
Typ. ––– ––– 0.50 –––
6.0(0.21)
Max. 0.41 1.7 ––– 40
–––
Units °C/W g(oz)
1
2017-08-24
AUIRGP35B60PD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
RG
Internal Gate Resistance
—
—
V.