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AUIRGP35B60PD-E Dataheets PDF



Part Number AUIRGP35B60PD-E
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet AUIRGP35B60PD-E DatasheetAUIRGP35B60PD-E Datasheet (PDF)

AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positive Temperature Coefficient  Lower VCE(SAT)  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Higher Reliability  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ. = 84m.

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AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positive Temperature Coefficient  Lower VCE(SAT)  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Higher Reliability  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ. = 84m ID (FET equivalent) = 35A C Applications  PFC and ZVS SMPS Circuits  DC/DC Converter Charger Benefits  Parallel Operation for Higher Current Applications  Lower Conduction Losses and Switching Losses  Higher Switching Frequency up to 150kHz G Gate GC E TO-247AD AUIRGP35B60PD-E C Collector E Emitter Base Part Number AUIRGP35B60PD-E Package Type TO-247AD Standard Pack Form Quantity Tube 25 Orderable Part Number AUIRGP35B60PD-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulse Collector Current (Ref. Fig. C. T.4) ILM Clamped Inductive Load Current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFSM Maximum Repetitive Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 600 V 60 34 120 120 A 40 15 60 ±20 V 308 123 W -55 to +150 °C 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case (each IGBT) Thermal Resistance Junction-to-Case (each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight * Qualification standards can be found at www.infineon.com Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 6.0(0.21) Max. 0.41 1.7 ––– 40 ––– Units °C/W g(oz) 1 2017-08-24 AUIRGP35B60PD-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — RG Internal Gate Resistance — — V.


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