MTA5D0N04V8

CYStech Electronics Corp. Spec. No. : C054V8 Issued Date : 2017.01.23 Revised Date : 2020.02.06 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTA5D0N04V8 BVDSS ID @ TC=25°C, VGS=4.5V ID @ TA=25°C, VGS=4.5V VGS=4.5V, ID=12A RDSON(TYP) VGS=2.5V, ID=8A 40V 47.6A 12.6A 4.7mΩ 6.1mΩ Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and halogen-free package Equivalent Circuit MTA5D0N04V8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTA5D0N04V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA5D0N04V8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V, TC=25C Continuous Drain Current @ VGS=4.5V, TC=100C Continuous Drain Current @ VGS=4.5V, TA=25C Continuous Drain Current @ VGS=4.5V, TA=70C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=20A, VDD=30V TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg ...