N-Channel MOSFET
CYStech Electronics Corp.
Spec. No. : C054V8 Issued Date : 2017.01.23 Revised Date : 2020.02.06 Page No. : 1/9
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C054V8 Issued Date : 2017.01.23 Revised Date : 2020.02.06 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTA5D0N04V8
BVDSS ID @ TC=25°C, VGS=4.5V ID @ TA=25°C, VGS=4.5V
VGS=4.5V, ID=12A RDSON(TYP)
VGS=2.5V, ID=8A
40V 47.6A 12.6A 4.7mΩ 6.1mΩ
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package
Equivalent Circuit
MTA5D0N04V8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device MTA5D0N04V8-0-T6-G
Package
Shipping
DFN3×3 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA5D0N04V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=4.5V, TC=25C
Continuous Drain Current @ VGS=4.5V, TC=100C
Continuous Drain Current @ VGS=4.5V, TA=25C
Continuous Drain Current @ VGS=4.5V, TA=70C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=20A, VDD=30V
TC=25℃
Total Power Dissipation
TC=100℃ TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID
IDSM IDM IAS EAS PD
PDSM Tj, Tstg
...
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