MTA7D0P03Q8

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA7D0P03Q8 Spec. No. : C808Q8 Issued Date : 2017.09.29 Revised Date : Page No. : 1/9 Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating package BVDSS ID@ TA=25°C, VGS=-10V ID@ TA=70°C, VGS=-10V RDSON@VGS=-10V, ID=-15A RDSON@VGS=-4.5V, ID=-10A RDSON@VGS=-3V, ID=-5A -30V -12.7A -10.2A 6.9mΩ(typ.) 9.0mΩ(typ.) 14.1mΩ(typ.) Equivalent Circuit MTA7D0P03Q8 Outline SOP-8 D D D D G：Gate S：Source D：Drain Pin 1 G S S S Ordering Information Device MTA7D0P03Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA7D0P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C808Q8 Issued Date : 2017.09.29 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @ TA=25°C, VGS=-10V ID Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current IDM -30 V ±20 -12.7 -10.2 A -70 *1 Avalanche Current @ L=0.1mH IAS -60 Avalanche Energy @ L=1mH, ID=-24A, VDD=-15V EAS Repetitive Avalanche Energy @ L=0.05mH EAR 288 *2 mJ 2.5 TA=25℃ Total Power Dissipation T...