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1N5817

STMicroelectronics

Low drop power Schottky rectifier

1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switchin...


STMicroelectronics

1N5817

File Download Download 1N5817 Datasheet


Description
1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K Description DO-41 Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to Table 1. Device summary DC converters. Packaged in DO-41 these devices Symbol Value Unit are intended for use in low voltage, high frequency inverters, free wheeling, polarity IF(AV) 1 A protection and small battery chargers. VRRM 40 V Tj 150 °C VF (max) 0.45 V July 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7 Characteristics 1 Characteristics 1N5817, 1N5818, 1N5819 Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit 1N5817 1N5818 1N5819 VRRM Repetitive peak reverse voltage 20 30 40 IF(RMS) Forward rms current 10 IF(AV) Average forward current TL = 125 °C, δ = 0.5 1 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 25 PARM Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 1200 1200 900 Tstg Storage temperature range Tj Maximum operating junction temperature(1) -65 to + 150 150 dV/dt Critical rate of rise of reverse voltage 10000 1. dPtot dTj <1 Rth(j-a) condition to avoid thermal runaway for a diode on its own heatsink. Table 3. Thermal resistances Symbol Parameter Value V A A A W °C °C V/µs Unit Rth (j-a) Junction to ambient Rth (j-l) Junction to le...




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