4800B

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET High-Efficient PWM Optimized 100 % UIS and Rg Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 25 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 9 6.5 7.0 5.0 Pulsed Drain Current (10 µs Pulse Width) IDM 40 A Continuous Source Current (Diode Conduction)a, b IS 2.3 Avalanche Current Single-Pulse Avalanche Energy IAS 15 L = 0.1 mH EAS 11.25 mJ Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 2.5 1.3 1.6 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typ. 40 70 24 Limits Max. 50 95 30 Unit °C/W Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unles...