RJP30H1

RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) C 4 12 3 G E Preliminary Datasheet R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C www.DataSheet.co.kr Symbol VCES VGES IC ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 30 200 40 3.13 150 –55 to +150 (Tc = 25°C) Unit V V A A W °C/W °C °C R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJP30H1DPD Electrical Characteristics Item Symbol Min Zero gate voltage collector current ICES — Gate to emitter leak current IGES — Gate to emitter cutoff voltage VGE(off) 2.5 Collector to emitter saturation voltage VCE(sat) — Input capacitance Cies — Output capacitance Coes — Reveres transfer capacitance Cres — Total gate charge Qg — Gate to emitter charge Qge — Gate to collector charge Qgc — Switching time td(on) — tr — td(off...