SMD Type
MOSFICET
MOS Field Effect Transistor 2SK3918
Features
Low on-state resistance RDS(on)1 = 7.5 m MAX. (VGS = 1...
SMD Type
MOSFICET
MOS Field Effect
Transistor 2SK3918
Features
Low on-state resistance RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A) Low Ciss: Ciss = 1300 pF TYP. 5 V drive available
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.15 1.50 -0.15
+0.15 5.55 -0.15
0.80+0.1 -0.1
0.127 max
3.80
+0.25 2.65 -0.1
+0.15 0.50 -0.15
+0.28 1.50 -0.1
Absolute Maximum Ratings Ta = 25
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
1 Gate 2 Drain 3 Source
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation TA=25 TC=25
Channel temperature Storage temperature * PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
25
V
VGSS
20
V
ID
48
A
Idp *
192
A
1.0
PD
W
29
Tch
150
Tstg
-55 to +150
Parameter www.DataSDhraeient4cUut.-coofmf current
Gate leakage current Gate cut off voltage Forward transfer admittance
Drain to source on-state resistance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Symbol IDSS IGSS
VGS(off) Yfs
RDS(on)1 RDS(on)2
Ciss Coss Crss ton
tr toff tf QG QGS QGD VF(S-D) trr Qrr
Testconditons VDS=25V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=12A VGS=10V,ID=24A VGS=5.0V,ID=12A
VDS=10V,VGS=0,f=1MHZ
ID=24A,VGS(on)=10V,RG=10 ,VDD=12.5V
VD...
