ESAD83-006R

ESAD83-006R Schottky Barrier Diode http://www.fujisemi.com FUJI Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak reverse voltage VRRM Average output current Io Non-repetitive forward surge current** Operating junction temperature Storage temperature Note* Out put current of center tap full wave connection. Note** Rating per element IFSM Tj Tstg Conditions - 50Hz Square wave duty =1/2 Tc = 119˚C Sine wave, 10ms 1shot - - Ratings 60 30 * 120 150 -40 to +150 Units V A A ˚C ˚C Electrical characteristics Item Forward voltage*** Reverse current*** Thermal resistance Note*** Rating per element (at Ta=25˚C unless otherwise specified.) Symbols Conditions VF IF = 12.5 A IR VR =VRRM Rth(j-c) Junction to case Maximum 0.58 20 1.2 Units V mA ˚C/W Mechanical characteristics Item Mounting torque Approximate mass Conditions Recommended torque - Maximum 0.4 to 0.6 5.5 Units Nm g 1 ESAD83-006R Outline Drawings [mm] 006 FUJI Diode http://www.fujisemi.com 006 2 IF Forward Current (A) IR Reverse Current (mA) ESAD83-006R Forward Characteristic (typ.) 100 10 Tj=150°C Tj=125°C Tj=100°C 1 Tj=25°C 0.1 FUJI Diode http://www.fujisemi.com Reverse Characteristic (typ.) Tj=150°C 100 Tj=125°C 10 Tj=100°C 1 Tj=25°C 0.1 0.01 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF Forward Voltage (V) 1E-3 0 10 20 30 40 50 60 70 VR Reverse Voltage (V) WF Forward Power Dissipation (...