30J101

Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)ç Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating Unit 600 V ±20 V 30 A 60 155 W 150 °C −55~150 °C JEDEC JEITA TOSHIBA Weight: 4.6 g ― ― 2-16C1C 1 2002-01-18 GT30J101 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance IGES VGE = ±20 V, VCE = 0  ICES VCE = 600 V, VGE = 0  VGE (OFF) IC = 3 mA, VCE = 5 V 5.0 VCE (sat) IC = 30 A, VGE = 15 V  Cies VCE = 20 V, VGE = 0, f = 1 MHz  tr Inductive Load  ton VCC = 300 V, IC = 30 A  tf VGG = ±15 V, RG = 43 Ω  toff (Note1)  Rth (j-c)   Note1: Switching time measurement circuit and input/output waveforms Typ. Max Unit    2.1 2200 0.12 0.40 0.15 0.70  ±500 1.0 8.0 2.7    0.30  0.81 nA mA V V pF µs °C/W GT30J301 −VGE IC RG L VCC VCE VGE 0 90% IC 90% 0 VCE...