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30J122
Silicon N-Channel IGBT
Description
www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Charact...
Toshiba
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