30J301

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 155 150 −55~150 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 4.6g ― ― 2−16C1C 1 2002-02-06 GT30J301 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN Gate Leakage Current Collector Cut−Off Current Gate−Emitter Cut−Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) IGES VGE = ±20V, VCE = 0 ― ICES VCE = 600V, VGE = 0 ― VGE (OFF) IC = 3mA, VCE = 5V 5.0 VCE (sat) IC = 30A, VGE = 15V ― Cies VCE = 20V, VGE = 0, f = 1MHz ― tr Inductive Load ― ton VCC = 300V, IC = 30A ― tf VGG = ±15V, RG = 43Ω ― (Note) toff ― VF IF = 30A, VGE = 0 ― trr IF = 30A, di / dt = −10...