30J311

GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 145 150 −55~150 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 3.65g ― ― 2−16H1A MARKING TOSHIBA GT30J311 Part No. (or abbreviation code) Lot No. 1 2004-07-06 GT30J311 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Gate Leakage Current Collector Cut−Off Current Gate−Emitter Cut−Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) IGES VGE = ±20V, VCE = 0 ― ICES VCE = 600V, VGE = 0 ― VGE (OFF) IC = 3mA, VCE = 5V 5.0 VCE (sat) IC = 30A, VGE = 15V ― Cies VCE = 20V, VGE = 0, f = 1MHz ― tr Inductive Load ― ton VCC = 300V, IC = 30A ― tf VGG = ±15V, RG ...