FIR80N075P

N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation FIR80N075PG PIN Connection TO-220 GDS D G S Marking Diagram Application ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply Package Marking And Ordering Information Device Marking Device Device Package FIR80N075P FIR80N075PG TO-220 YAWW FIR80N075P Y = Year A = Assembly Location WW = Work Week FIR80N075P = Specific Device Code Product Summary BVDSS typ. 84 V RDS(ON) typ. 6.5 mΩ max. 8.0 mΩ ID 80 A Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃ ) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Peak diode recovery voltage Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) Operating Junction and Storage Te...