Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High co...
Bipolar
Transistors Silicon
NPN Triple-Diffused Type
2SC5200N
1. Applications
Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage
3. Packaging and Internal Circuit
2SC5200N
1. Base 2. Collector (Heatsink) 3. Emitter
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation
(Note 1)
VCBO VCEO VEBO
IC IB PC
230
V
230
5
15
A
1.5
150
W
Junction temperature Storage temperature
Tj
150
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
Start of commercial production
2012-08
1
2015-05-12
Rev.2.0
5. Thermal Ch...