Document
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series
Schematic
Features:
• Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) • Current transfer ratio (CTR: 50~600% at IF = 5mA, VCE = 5V) • High isolation voltage between input and output (Viso = 5000Vrms) • Creepage distance > 7.62mm • Operating temperature up to +110°C • Compact small outline package •The product itself will remain within RoHS compliant version • Compliance with EU REACH • UL and cUL approved(No.E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CQC approved
Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector
Description
The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
• Programmable controllers • System appliances, measuring instruments • Telecommunication equipments • Home appliances, such as fan heaters, etc. • Signal transmission between circuits of different potentials and impedances
1 Copyright © 2010, EverVligehrt .A:l1l R7ightsRReesleeravesde. RDealetaes:e0D1a/0te2:D/2e0c 1258, 2017.Issue N:Ao:pDpPrCo-v00e0d0(046 Rev.17 ) www.everlight.com
DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Input
Forward current Peak forward current (1us, pulse) Reverse voltage
Power dissipation Derating factor (above Ta = 100°C)
Power dissipation Derating factor (above Ta = 100°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation Isolation Voltage*1
Operating Temperature Storage Temperature Soldering Temperature*2
IF IFP VR
PD
PC
IC VCEO VECO PTOT VISO TOPR TSTG TSOL
60 1 6 100 2.9 150 5.8 50 35 6 200 5000 -55 to 110 -55 to 125 260
mA A V mW mW/°C mW mW/°C mA V V mW V rms °C °C °C
Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 seconds
2 Copyright © 2010, EverVligehrt .A:l1l R7ightsRReesleeravesde. DRealetaes:e0D1a/0te2:/D2e0c1285, 2017. Issue:NAop: DpProC-v0e0d00(046Rev.17 ) www.everlight.com
DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward Voltage Reverse Current Input capacitance
Output
Parameter
Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage
Symbol VF IR Cin
Symbol ICEO
BVCEO BVECO
Min. -
Min 35 6
Typ. 1.2
30
Typ. -
Max.
Unit
1.4
V
10
µA
250
pF
Max.
Unit
100
nA
-
V
-
V
Transfer Characteristics
Parameter
Symbol
Min
Typ.
EL817
50
-
EL817A
80
-
Current
EL817B
130
-
Transfer EL817C
CTR
200
-
ratio
EL817D
300
-
EL817X
100
-
EL817Y
150
-
Collector-Emitter satu.