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7MBR75U4B120-50 Dataheets PDF



Part Number 7MBR75U4B120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description 7MBR75U4B120-50
Datasheet 7MBR75U4B120-50 Datasheet7MBR75U4B120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 7MBR75VB120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Conditions Inverter Colle.

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http://www.fujielectric.com/products/semiconductor/ 7MBR75VB120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Conditions Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) VCES VGES IC Icp -IC -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2t Brake Converter Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature TC Maximum junction temperature Tjmax Operating temperature (under switching conditions) Tjop Storage temperature Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Screw torque Mounting (*3) - Continuous 1ms 1ms 1 device TC=100°C TC=80°C Continuous 1ms 1 device TC=80°C TC=80°C 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter AC : 1min. M5 Maximum ratings 1200 ±20 75 150 75 150 385 1200 ±20 50 100 280 1200 1600 75 520 1352 175 150 150 150 125 175 150 -40 ~ +125 2500 3.5 Units V V A W V V A W V V A A A2s °C VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 1391a MARCH 2014 7MBR75VB120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Internal gate resistance Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE (sat) (terminal) VCE (sat) (chip) Rg(int) ton tr toff tf IRRM VFM (chip) IRRM R B VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 75mA VGE = 15V IC = 75A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 75A Tj=25°C Tj=125°C Tj=150°C - VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 75A VGE = +15 / -15V RG = 2.2Ω IF = 75A IF = 75A IF = 75A VGE = 0V VCE = 1200V VCE = 0V VGE = +20 / -20V VGE = 15V IC = 50A VGE = 15V IC = 50A VCE = 600V IC = 50A VGE = +15 / -15V RG = 15Ω VR = 1200V IF = 75A VR = 1600V T = 25°C T = 100°C T = 25 / 50°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C terminal chip Brake Thermistor Converter Characteristics min. typ. max. - - 1.0 - - 200 6.0 6.5 7.0 - 2.35 2.80 - 2.70 - - 2.75 - - 1.85 2.30 - 2.20 - - 2.25 - - 10 - - 6.0 - - 0.39 1.20 - 0.09 0.60 - 0.03 - - 0.53 1.00 - 0.06 0.30 - 2.20 2.65 - 2.35 - - 2.30 - - 1.70 2.15 - 1.85 - - 1.80 - - - 0.35 - - 1.0 Units mA nA V V Ω nF µs V µs mA - - 200 nA - 2.20 2.65 - 2.55 - - 2.60 - V - 1.85 2.30 - 2.20 - - 2.25 - - 4 - Ω - 0.39 1.20 - 0.09 0.60 µs - 0.53 1.00 - 0.06 0.30 - - 1.00 mA - 1.90 2.35 V - 1.40 - - - 1.0 mA - 5000 - Ω 465 495 520 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Inverter IGBT Thermal resistance (1device) Rth(j-c) Inverter FWD Brake IGBT Converter Diode Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 0.39 - - 0.55 - - 0.54 - - 0.43 - 0.05 - Units °C/W 2 7MBR75VB120-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 150 VGE =20V 15V 125 12V Collector current: IC [A] 100 75 10V 50 25 0 0 8V 1 2 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 150 Tj=25°C 125 Tj=150°C Collector current.


bq24081-Q1 7MBR75U4B120-50 8S003F3P6


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