Document
http://www.fujielectric.com/products/semiconductor/
7MBR75VB120-50
IGBT Modules
IGBT MODULE (V series) 1200V / 75A / PIM
Features
Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Inverter
Collector-Emitter voltage Gate-Emitter voltage
Collector current
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
VCES VGES IC Icp -IC -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2t
Brake
Converter
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature
TC
Maximum junction temperature
Tjmax
Operating temperature (under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1) between thermistor and others (*2)
Viso
Screw torque Mounting (*3)
-
Continuous 1ms
1ms 1 device
TC=100°C TC=80°C
Continuous 1ms 1 device
TC=80°C TC=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C half sine wave
Inverter, Brake Converter Inverter, Brake Converter
AC : 1min. M5
Maximum ratings 1200 ±20 75 150 75 150 385 1200 ±20 50 100 280 1200 1600 75 520 1352 175 150 150 150 125 175 150
-40 ~ +125
2500
3.5
Units V V
A
W V V A W V V A A A2s
°C
VAC Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
1391a
MARCH 2014
7MBR75VB120-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Inverter
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current
Collector-Emitter saturation voltage
Internal gate resistance Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
Rg(int) Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
ICES
IGES
VCE (sat) (terminal)
VCE (sat) (chip)
Rg(int) ton tr toff tf IRRM VFM (chip) IRRM
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 75mA
VGE = 15V IC = 75A
Tj=25°C Tj=125°C Tj=150°C
VGE = 15V IC = 75A
Tj=25°C Tj=125°C Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V IC = 75A VGE = +15 / -15V RG = 2.2Ω
IF = 75A
IF = 75A
IF = 75A VGE = 0V VCE = 1200V VCE = 0V VGE = +20 / -20V
VGE = 15V IC = 50A
VGE = 15V IC = 50A
VCE = 600V IC = 50A VGE = +15 / -15V RG = 15Ω VR = 1200V
IF = 75A
VR = 1600V T = 25°C T = 100°C T = 25 / 50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
terminal chip
Brake
Thermistor Converter
Characteristics
min. typ. max.
-
-
1.0
-
-
200
6.0
6.5
7.0
-
2.35 2.80
-
2.70
-
-
2.75
-
-
1.85 2.30
-
2.20
-
-
2.25
-
-
10
-
-
6.0
-
-
0.39 1.20
-
0.09 0.60
-
0.03
-
-
0.53 1.00
-
0.06 0.30
-
2.20 2.65
-
2.35
-
-
2.30
-
-
1.70 2.15
-
1.85
-
-
1.80
-
-
-
0.35
-
-
1.0
Units mA nA V
V
Ω nF
µs
V
µs mA
-
-
200
nA
-
2.20 2.65
-
2.55
-
-
2.60
-
V
-
1.85 2.30
-
2.20
-
-
2.25
-
-
4
-
Ω
-
0.39 1.20
-
0.09 0.60
µs
-
0.53 1.00
-
0.06 0.30
-
-
1.00 mA
-
1.90 2.35
V
-
1.40
-
-
-
1.0
mA
-
5000
-
Ω
465
495
520
3305 3375 3450
K
Thermal resistance characteristics
Items
Symbols Conditions
Inverter IGBT
Thermal resistance (1device)
Rth(j-c)
Inverter FWD Brake IGBT
Converter Diode
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
-
-
0.39
-
-
0.55
-
-
0.54
-
-
0.43
-
0.05
-
Units °C/W
2
7MBR75VB120-50
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
150
VGE =20V
15V
125
12V
Collector current: IC [A]
100
75
10V
50
25
0 0
8V
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
150 Tj=25°C
125
Tj=150°C
Collector current.