USG170N03

UNISONIC TECHNOLOGIES CO., LTD USG170N03 Preliminary 85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET  DESCRIPTION The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A * Optimized for high speed switching, Logic level * Enhanced Body diode dv/dt capability * Enhanced Avalanche Ruggednessy  SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pin Assignment Package Packing 12345678 USG170N03L-K08-5060-R USG170N03G-K08-5060-R DFN5060-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source USG170N03G-K08-5060-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) K08-5060: DFN5060-8 (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-353.a USG170N03  MARKING Lot Code UTC USG 170N03 Date Code Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-353.a USG170N03 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified) PARAMETER SYM...