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EM4133 Dataheets PDF



Part Number EM4133
Manufacturers EM Microelectronic
Logo EM Microelectronic
Description Contactless RW Identification
Datasheet EM4133 DatasheetEM4133 Datasheet (PDF)

EM MICROELECTRONIC - MARIN SA EM4133 512 bit Read/Write, ISO15693 Standard Compliant Contactless RW Identification Device General Description The EM4133 is a CMOS integrated circuit intended for use in passive contactless Read/Write transponders full compliant with the ISO 15693 standard. The user’s configurable 448 bit EEPROM memory is organized in 14 words of 32 bits, each word can be irreversibly locked. The memory contains a 64 bit unique serial number. The ISO 15693 anticollision algorit.

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EM MICROELECTRONIC - MARIN SA EM4133 512 bit Read/Write, ISO15693 Standard Compliant Contactless RW Identification Device General Description The EM4133 is a CMOS integrated circuit intended for use in passive contactless Read/Write transponders full compliant with the ISO 15693 standard. The user’s configurable 448 bit EEPROM memory is organized in 14 words of 32 bits, each word can be irreversibly locked. The memory contains a 64 bit unique serial number. The ISO 15693 anticollision algorithm allows operating more tags in the field simultaneously. IC is completely ISO 15693 compliant since it includes all ISO15693 mandatory features. Applications  Laundry  Access Control  Ticketing  Asset management Features  ISO15693 Standard: Fully compliant, support all Mandatory and most part of the Optional commands  Operating Frequency: 13.56MHz ± 7kHz (ISM, world-wide licence free available)  64-bit Unique Identifier (UID)  448 bit EEPROM organized in 14 words of 32 bits  302 bit of user’s free memory  32 bit password to protect the data memory integrity  Lock feature convert EEPROM words in Read Only  Secure data transfers using the Login command  Smart Electronic Article Surveillance (EAS)  Two different on-chip resonant capacitor: 23.5pF and 97pF (selectable by mask option)  ISO/IEC 15693 anti-collision algorithm allowing more tags in reader field at the same time  No external supply buffer capacitor needed (passive mode)  -40 to +85˚C temperature range  Bonding pads optimised for flip-chip assembly Typical Operating Configuration C1 EM4133 C2 IC Block Diagram Fig. 1 L2 VPOS Vdd R E G Lr Cr U L RECTIFIER CBU F A T O R POWER MONITOR POR PCK L1 CLOCK EXTRACTOR RECEIVED CLOCK AM DEMODULATOR PULSE LOGIC EEPROM MODULATOR MOD LIMITER Fig.2 Copyright 2012, EM Microelectronic-Marin SA 1 4133-DS.doc, Version 4.0, 5-Oct-12 www.emmicroelectronic.com Definitions, abbreviations and symbols Terms and definitions Downlink communication tag to reader communication link Uplink communication reader to tag communication link Modulation index index equal to [a-b]/[a+b] where a and b are the peak and minimum signal amplitude respectively. Note: The value of the index may be expressed as a percentage. Subcarrier a signal of frequency fs used to modulate the carrier of frequency fc Byte a byte consists of 8 bits of data designated b1 to b8, from the most significant bit (MSB,b8) to the least significant bit (LSB,b1) Anticollision loop Algorithm used to prepare for and handle a dialogue between a VCD and one or more VICCs from several in its energising field. EM4133 Abbreviations AFE Analog Front-End AFI Application family identifier ASK Amplitude shift keying CRC Cyclic redundancy check DSFID Data storage format identifier EOF End of frame LSB Least significant bit MSB Most significant bit PPM Pulse position modulation RF Radio frequency RFU Reserved for future use SOF Start of frame SUM Super User Memory SM System Memory VCD Vicinity coupling device (reader) VICC Vicinity integrated circuit card (tag) UID Unique identifier Symbols a Carrier amplitude without modulation b Carrier amplitude when modulated fc Frequency of operating field (carrier frequency) fs Frequency of subcarrier Absolute Maximum Ratings Parameter Supply Voltage Voltage at any other pin except L1,L2 Storage temperature Maximum AC current induced on L1, L2 Symbol VPOS Vpin Tstore Icoil_RMS Conditions -0.3 to 7V VSS-0.3 to 3.6V -55 to +125V 50mA Electrostatic discharge1) VESD 2000V Table 1 Note 1: Human Body Model (HBM; 100pF, 1.5k Ohms) with reference to substrate VSS Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter AC peak current induced on L1, L2 in operating conditions Operating temperature Symbol Min Icoilop Top -40 Max Unit 30 mA 85 °C Table 2 Copyright 2012, EM Microelectronic-Marin SA 2 4133-DS.doc, Version 4.0, 5-Oct-12 www.emmicroelectronic.com Electrical Characteristics Please note that electrical parameters are preliminary. Operating conditions (unless otherwise specified): VSS=0V fcoil = 13.56MHz Sine Wave Vcoil=4Vpp Top=25°C Parameter Resonance Capacitor Version 001 Resonance Capacitor Version 500 EEPROM write voltage Modulator Voltage Drop, low current Modulator Voltage Drop, high current EEPROM Cycling Endurance EEPROM Retention Symbol Cr23 Cr97 VWR Vmodiso1 V.


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