D1691

KSD1691 KSD1691 Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C) Complementary to KSB1151 1 TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current (DC) PC Collector Dissipation (Ta=25°C) PC Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 hFE3 *DC Current Gain VCE(sat) *Collector-Emitter Saturation Voltage VBE(sat) *Base-Emitter Saturation Voltage tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5Ω hFE Classificntion Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 Value 60 60 7 5 8 1 1.3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C Min. 60 100 50 Typ. 0.1 0.9 0.2 1.1 0.2 Max. 10 10 Units µA µA 400 0.3 V 1.2 V 1 µs 2.5 µs 1 µs G 200 ~ 400 ©2000 Fairchild Semiconducto...