MMBFJ211

N-Channel RF Amplifier J211, MMBFJ211 Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low−noise for sensitive receivers. Sourced from process 90. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low− duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol Parameter J211 MMBFJ211 (Note 3) (Note 3) Unit PD Total Device Dissipation Derate Above 25°C 350 225 mW 2.8 1.8 mW/°C RqJC Thermal Resistance, Junction−to−Case 125 − °C/W RqJA Thermal Resistance, Junction−to−Ambient 357 556 °C/W 3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. DATA SHEET www.onsemi.com 1. Drain 12 3 2. Source 3. Gate Bent Lead Tape & Reel Ammo Packing TO−92 3 CASE 135AR G S NOTE: Source & Drain are D inte...