DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1456
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANS...
DATA SHEET
SILICON
TRANSISTOR ARRAY
µPA1456
NPN SILICON POWER
TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON
TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION The µPA1456 is
NPN silicon epitaxial Darlington
Power
Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES Easy mount by 0.1 inch of terminal interval. High hFE for Darlington
Transistor.
PACKAGE DIMENSION (in millimeters)
26.8 MAX.
4.0
10 2.5
MIN.
ORDERING INFORMATION
Part Number µPA1456H
Package 10 Pin SIP
Quality Grade Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage VCEO 100
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
±5 A/unit
Collector Current (pulse)
IC(pulse)* ±10 A/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C
2.54 1.4 0.6 ±0.1
1.4 0.5 ±0.1
1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
(C)
(B) R1 R2 (E)
PIN No.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10 : Emitter (E)
R1 =....
