VS-CPV363M4FPbF

www.vishay.com VS-CPV363M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 11 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 8.7 A, 25 °C Speed 1.37 V 1 kHz to 10 kHz Package SIP Circuit configuration Three phase inverter FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all “tail” losses HEXFRED® soft ultrafast diodes Optimized for medium speed 1 kHz to 10 kHz, see fig. 1 for current vs. frequency curve Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (insulated metal substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.  ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed...