N-Channel MOSFET
11N65(F,B,H)S
11 Amps,650 Volts N-Channel Super Junction Power MOSFET
FEATURE
11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5...
Description
11N65(F,B,H)S
11 Amps,650 Volts N-Channel Super Junction Power MOSFET
FEATURE
11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 11N65S
ITO-220AB 11N65FS
TO-263 11N65BS
TO-262
\
11N65HS
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
11N65(F,B,H)S
650 ±30 11 33 280 5.5 0.5 15 -55 to +150
260
10 1.1
UNIT
V
A mJ A mJ V/ns ℃ ℃ lbf·in N·m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol Rth(J-c) Rth(ch-c) Rth(ch-a)
PD
ITO-220 3.82 3.82 80 32.7
TO-220 1.03 1.03 62 121
TO-262/263 1.03 1.03 62 121
Units ℃/W ℃/W ℃/W
W
Version1.0-2015.2
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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS...
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