N-Channel MOSFET. 11N65M2 Datasheet

11N65M2 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics 11N65M2
STD11N65M2, STP11N65M2, STU11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2
Power MOSFET in DPAK, TO-220 and IPAK packages
TAB
3
DPAK 1
TAB
TAB
TO-220
1 23
IPAK
123
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
VDS
RDS(on) max.
ID
STD11N65M2
STP11N65M2
650 V
0.68 Ω
7A
STU11N65M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
PTOT
85 W
Package
DPAK
TO-220
IPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status link
STD11N65M2
STP11N65M2
STU11N65M2
DS10348 - Rev 6 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


11N65M2 Datasheet
Recommendation 11N65M2 Datasheet
Part 11N65M2
Description N-Channel MOSFET
Feature 11N65M2; STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSF.
Manufacture STMicroelectronics
Datasheet
Download 11N65M2 Datasheet




STMicroelectronics 11N65M2
STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by Tjmax.
2. ISD ≤ 7 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDS = 400 V
3. VDS ≤ 520 V.
Value
±25
7
4.4
28
85
15
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
DPAK
50
Value
TO-220
1.47
62.5
Unit
IPAK
100
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not repetitive
EAS (2)
Single pulse avalanche energy
1. Pulse width limited by Tjmax.
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Value
Unit
1.5
A
110
mJ
DS10348 - Rev 6
page 2/27



STMicroelectronics 11N65M2
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 650 V
VGS = 0 V, VDS = 650 V, Tcase = 125 °C(1)
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
1. Defined by design, not subject to production test.
Min.
650
2
Typ.
3
0.60
Max.
1
100
±10
4
0.68
Unit
V
µA
µA
V
Ω
Table 5. Dynamic
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
410
-
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
20
-
pF
Crss
Reverse transfer capacitance
-
0.9
-
Coss eq. (1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V
-
43
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
6.4
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 520 V, ID = 7 A, VGS = 0 to 10 V
(see Figure 16)
-
12.5
-
-
3.2
-
nC
-
5.8
-
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min. Typ. Max. Unit
-
9.5
-
VDD = 325 V, ID = 3.5 A RG = 4.7 Ω,
-
7.5
VGS = 10 V (see Figure 15 and Figure 20)
-
26
-
-
ns
-
15
-
DS10348 - Rev 6
page 3/27







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