35N65DM2

STW35N65DM2 Datasheet N-channel 650 V, 93 mΩ typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Features Order code VDS RDS(on) max. ID STW35N65DM2 650 V 110 mΩ 32 A 3 2 1 TO-247 D(2, TAB) Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications G(1) Description S(3) NG1D2TS3Z This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW35N65DM2 Product summary Order code STW35N65DM2 Marking 35N65DM2 Package TO-247 Packing Tube DS12247 - Rev 3 - August 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage (static) VGS Gate-source voltage (dynamic AC (f > 1 Hz)) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope di/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature TJ Operating ju...