N-Channel MOSFET. 35N65DM2 Datasheet

35N65DM2 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics 35N65DM2
STW35N65DM2
Datasheet
N-channel 650 V, 93 mΩ typ., 32 A MDmesh DM2 Power MOSFET
in a TO-247 package
Features
Order code
VDS
RDS(on) max.
ID
STW35N65DM2
650 V
110 mΩ
32 A
3
2
1
TO-247
D(2, TAB)
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
G(1)
Description
S(3)
NG1D2TS3Z
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link
STW35N65DM2
Product summary
Order code
STW35N65DM2
Marking
35N65DM2
Package
TO-247
Packing
Tube
DS12247 - Rev 3 - August 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


35N65DM2 Datasheet
Recommendation 35N65DM2 Datasheet
Part 35N65DM2
Description N-Channel MOSFET
Feature 35N65DM2; STW35N65DM2 Datasheet N-channel 650 V, 93 mΩ typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package .
Manufacture STMicroelectronics
Datasheet
Download 35N65DM2 Datasheet




STMicroelectronics 35N65DM2
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Gate-source voltage (static)
VGS
Gate-source voltage (dynamic AC (f > 1 Hz))
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
di/dt(2)
Peak diode recovery current slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature
TJ
Operating junction temperature
1. Pulse width is limited by safe operating area.
2. ISD ≤ 32 A, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.
3. VDS ≤ 520 V.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive
EAS (1)
Single pulse avalanche energy
1. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.
STW35N65DM2
Electrical ratings
Value
±25
±30
32
20
90
250
100
1000
100
-55 to 150
Unit
V
A
A
W
V/ns
A/μs
V/ns
°C
Value
0.5
50
Unit
°C/W
°C/W
Value
Unit
4
A
1150
mJ
DS12247 - Rev 3
page 2/12



STMicroelectronics 35N65DM2
STW35N65DM2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
VGS = 0 V, VDS = 650 V, TC = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 16 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
650
V
1
µA
100
±5 µA
3
4
5
V
93 110 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
- 2540 -
pF
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
115
-
pF
Crss
Reverse transfer capacitance
-
2.5
-
pF
Coss eq. (1) Equivalent output capacitance
VDS = 0 to 520 V, VGS = 0 V
-
204
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.2
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 520 V, ID = 32 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
- 56.3 -
nC
- 12.7 -
nC
- 27.6 -
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 325 V, ID = 16 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for resistive
load switching times and
Figure 18. Switching time waveform)
Min. Typ. Max. Unit
- 23.4 -
ns
-
23
-
ns
-
72
-
ns
- 10.4 -
ns
DS12247 - Rev 3
page 3/12







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)