N-Channel MOSFET. 4N60TF Datasheet

4N60TF MOSFET. Datasheet pdf. Equivalent


PINGWEI 4N60TF
4N60TF
4 Amps,600 Volts N-CHANNEL Power MOSFET
FEATURE
4A,600V,RDS(ON)MAX=2.5Ω@VGS=10V/2A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
Halogen free
TO-220TF
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(ch-c)
Rth(ch-a)
PD
4N60TF
600
±30
4
16
250
5
-55to+150
260
10
1.1
4N60TF
4.17
62.5
30
UNIT
V
A
mJ
V/ns
lbf·in
N·m
Units
℃/W
℃/W
W
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4N60TF Datasheet
Recommendation 4N60TF Datasheet
Part 4N60TF
Description N-Channel MOSFET
Feature 4N60TF; 4N60TF 4 Amps,600 Volts N-CHANNEL Power MOSFET FEATURE  4A,600V,RDS(ON)MAX=2.5Ω@VGS=10V/2A  Low .
Manufacture PINGWEI
Datasheet
Download 4N60TF Datasheet




PINGWEI 4N60TF
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=250uA
600
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Reference to 25℃
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=600V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
2
Drain-Source On-State Resistance
RDS(on) VGS=10V,ID=2A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V,ID=4A,
Turn-On Rise Time
tr
RG=10Ω (Note3,4)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=4A,
Gate-Source Charge
Qgs
VGS=10V, (Note3,4)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=4A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=4A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. L=10mH,Rg=25Ω,IAS=7.1A , starling TJ=25.
3. ISD=4A,dI/dt100A/us,VDDBVDSS,starting TJ=25,Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Typ
0.67
2.1
590
55
4
14
15
34
13
14.5
2.6
6.5
250
1
Max
1
100
-100
4
2.5
4
16
1.5
Units
V
V/
uA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
uC
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PINGWEI 4N60TF
TEST CIRCUIT AND WAVEFORM
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