4N60TF

4N60TF 4 Amps,600 Volts N-CHANNEL Power MOSFET FEATURE  4A,600V,RDS(ON)MAX=2.5Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability  Halogen free TO-220TF Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw Parameter Thermal resistance , Channel to Case Thermal resistance , Channel to Ambient Maximum Power Dissipation TC=25℃ Symbol Rth(ch-c) Rth(ch-a) PD 4N60TF 600 ±30 4 16 250 5 -55to+150 260 10 1.1 4N60TF 4.17 62.5 30 UNIT V A mJ V/ns ℃ ℃ lbf·in N·m Units ℃/W ℃/W W http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 600 Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃ ， － ID=250uA Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V － Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 Drain-Source On-Stat...