150N03GSL

150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes  150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-252 150N03GSL TO-251 150N03DSL Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds ID IDM EAS TJ,TSTG TL Thermal Characteristics Parameter Thermal resistance , Junction to Case Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) PD 150N03(G,D)SL 30 ±20 150 440 500 -55 to +150 260 150N03(G,D)SL 1.3 96 UNIT V A mJ ℃ ℃ Units ℃/W W Version1.0-2015.2 www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA Drain-Source On-State Resistance RDS(on) VGS=10V,ID=20A VGS=4.5V,ID=20A Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MH...