N-Channel MOSFET
4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ci...
Description
4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 4N65
ITO-220AB 4N65F
TO-262 4N65H
TO-263 4N65B
TO-252 4N65G
TO-251 4N65D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
4N65 600 ±30 4 16 300 4 30 4.5 -55 to +150
260
10 1.1
UNIT
V
A mJ A mJ V/ns ℃
℃
lbf·in N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
RthJC PD
ITO-220
2.2 57
TO-220
1.8 70
TO-262 TO-263
1.8 70
TO-251 TO-252
5.7 22
Units
℃/W W
- -
Rev. 14-1 http:// www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Dra...
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