Document
4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 4N65
ITO-220AB 4N65F
TO-262 4N65H
TO-263 4N65B
TO-252 4N65G
TO-251 4N65D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
4N65 600 ±30 4 16 300 4 30 4.5 -55 to +150
260
10 1.1
UNIT
V
A mJ A mJ V/ns ℃
℃
lbf·in N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
RthJC PD
ITO-220
2.2 57
TO-220
1.8 70
TO-262 TO-263
1.8 70
TO-251 TO-252
5.7 22
Units
℃/W W
- -
Rev. 14-1 http:// www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA Reference to 25℃, ID=250uA VDS=650V,VGS=0V VGS=30V,VDS=0V VGS=-30V,VDS=0V
VDS=VGS,ID=250uA VGS=10V,ID=2A
VDS=25V,VGS=0V, f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V,ID=4A,
Turn-On Rise Time
tr
RG=25Ω
Turn-Off Delay Time
td(off)
(Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=520V,ID=4A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=4A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=4A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=36mH,Rg=25Ω,IAS=4A , TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
650 -
-
V
-
0.6
- V/℃
-
-
1
uA
-
-
10
uA
-
-
-10
uA
2
-
4
V
- 2.2 2.5
Ω
- 520 670
pF
-
70
90
pF
-
8
11
pF
-
13
35
ns
-
45 100
ns
-
25
60
ns
-
35
80
ns
-
15
20
nC
-
3.4
-
nC
-
7.1
-
nC
-
-
4
A
-
-
16
A
-
-
1.5
V
- 250 -
ns
-
1.5
-
uC
- -
.