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4N65H Dataheets PDF



Part Number 4N65H
Manufacturers PINGWEI
Logo PINGWEI
Description N-Channel MOSFET
Datasheet 4N65H Datasheet4N65H Datasheet (PDF)

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche .

  4N65H   4N65H



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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 4N65 600 ±30 4 16 300 4 30 4.5 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol RthJC PD ITO-220 2.2 57 TO-220 1.8 70 TO-262 TO-263 1.8 70 TO-251 TO-252 5.7 22 Units ℃/W W - - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage BVDSS Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics Gate-Source Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(on) Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Test Conditions VGS=0V,ID=250uA Reference to 25℃, ID=250uA VDS=650V,VGS=0V VGS=30V,VDS=0V VGS=-30V,VDS=0V VDS=VGS,ID=250uA VGS=10V,ID=2A VDS=25V,VGS=0V, f=1.0MHZ Switching Characteristics Turn-On Delay Time td(on) VDD=300V,ID=4A, Turn-On Rise Time tr RG=25Ω Turn-Off Delay Time td(off) (Note4,5) Turn-Off Fall Time tf Total Gate Charge Qg VDS=520V,ID=4A, Gate-Source Charge Qgs VGS=10V, (Note4,5) Gate-Drain Charge Qgd Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD IS=4A,VGS=0V Reverse Recovery Time trr VGS=0V,IS=4A, Reverse Recovery Charge Qrr dIF/dt=100A/us, (Note4) Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=50V,starling,L=36mH,Rg=25Ω,IAS=4A , TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature. Mix Typ Max Units 650 - - V - 0.6 - V/℃ - - 1 uA - - 10 uA - - -10 uA 2 - 4 V - 2.2 2.5 Ω - 520 670 pF - 70 90 pF - 8 11 pF - 13 35 ns - 45 100 ns - 25 60 ns - 35 80 ns - 15 20 nC - 3.4 - nC - 7.1 - nC - - 4 A - - 16 A - - 1.5 V - 250 - ns - 1.5 - uC - - .


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