N-Channel MOSFET. 4N65B Datasheet

4N65B MOSFET. Datasheet pdf. Equivalent


PINGWEI 4N65B
4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
4N65
ITO-220AB
4N65F
TO-262
4N65H
TO-263
4N65B
TO-252
4N65G
TO-251
4N65D
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
4N65
600
±30
4
16
300
4
30
4.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25
Symbol
RthJC
PD
ITO-220
2.2
57
TO-220
1.8
70
TO-262
TO-263
1.8
70
TO-251
TO-252
5.7
22
Units
/W
W
- 页码 -
Rev. 14-1
http:// www.perfectway.cn


4N65B Datasheet
Recommendation 4N65B Datasheet
Part 4N65B
Description N-Channel MOSFET
Feature 4N65B; 4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low .
Manufacture PINGWEI
Datasheet
Download 4N65B Datasheet




PINGWEI 4N65B
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=650V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=2A
VDS=25V,VGS=0V,
f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V,ID=4A,
Turn-On Rise Time
tr
RG=25Ω
Turn-Off Delay Time
td(off)
(Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=520V,ID=4A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=4A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=4A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=36mH,Rg=25Ω,IAS=4A , TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
650
V
0.6
V/
1
uA
10
uA
-10
uA
2
4
V
2.2 2.5
Ω
520 670
pF
70
90
pF
8
11
pF
13
35
ns
45 100
ns
25
60
ns
35
80
ns
15
20
nC
3.4
nC
7.1
nC
4
A
16
A
1.5
V
250
ns
1.5
uC
- 页码 -
Rev. 14-1
http:// www.perfectway.cn







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