N-Channel MOSFET. 140N04GSL Datasheet

140N04GSL MOSFET. Datasheet pdf. Equivalent


PINGWEI 140N04GSL
140N04(G,D)SL
140 Amps,40 Volts N-CHANNEL MOSFET
Featutes
140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A
RDS(ON)MAX=3.2mΩ@VGS=4.5V/20A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
140N04GSL
TO-251
140N04DSL
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
ID
IDM
EAS
TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25
Symbol
Rth(J-c)
PD
140N04(G,D)SL
40
±20
140
380
500
-55 to +150
260
140N04(G,D)SL
1.3
96
UNIT
V
A
mJ
Units
℃/W
W
Version1.0-2015.2
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140N04GSL Datasheet
Recommendation 140N04GSL Datasheet
Part 140N04GSL
Description N-Channel MOSFET
Feature 140N04GSL; 140N04(G,D)SL 140 Amps,40 Volts N-CHANNEL MOSFET Featutes  140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A RD.
Manufacture PINGWEI
Datasheet
Download 140N04GSL Datasheet




PINGWEI 140N04GSL
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=40V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=20V,ID=70A,
Turn-On Rise Time
tr
RG=3.7Ω
Turn-Off Delay Time
td(off)
VGS=10V (Note3,4)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=20V,ID=70A,
Gate-Source Charge
Qgs
VGS=4.5V (Note3,4)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Diode Forward Voltage
VSD
IS=20A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=40A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us,(Note3)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=10V,L=0.5mH,Rg=25Ω, TJ=25.
3. dI/dt=200A/us,starting TJ=25.Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
40 - -
V
--
1
uA
- - 100 nA
- - -100 nA
1.0 3.0
V
2.3 2.8 mΩ
2.7 3.2 mΩ
7800 pF
1258 pF
782 pF
25
ns
82
ns
86
ns
42
ns
170 nC
52 nC
68 nC
- - 1.1 V
30.9
ns
27 nC
Version1.0-2015.2
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PINGWEI 140N04GSL
TEST CIRCUIT AND WAVEFORM
Version1.0-2015.2
www.perfectway.cn







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