Document
140N04(G,D)SL
140 Amps,40 Volts N-CHANNEL MOSFET
Featutes
140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A RDS(ON)MAX=3.2mΩ@VGS=4.5V/20A
Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-252 140N04GSL
TO-251 140N04DSL
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
ID IDM EAS TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25℃
Symbol Rth(J-c)
PD
140N04(G,D)SL 40 ±20 140 380 500
-55 to +150
260
140N04(G,D)SL 1.3 96
UNIT V
A mJ ℃ ℃
Units ℃/W
W
Version1.0-2015.2
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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=40V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=20A VGS=4.5V,ID=20A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=20V,ID=70A,
Turn-On Rise Time
tr
RG=3.7Ω
Turn-Off Delay Time
td(off)
VGS=10V (Note3,4)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=20V,ID=70A,
Gate-Source Charge
Qgs
VGS=4.5V (Note3,4)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Diode Forward Voltage
VSD
IS=20A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=40A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us,(Note3)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=10V,L=0.5mH,Rg=25Ω, TJ=25℃.
3. dI/dt=200A/us,starting TJ=25℃.Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
40 - -
V
--
1
uA
- - 100 nA
- - -100 nA
1.0 - 3.0
V
- 2.3 2.8 mΩ
- 2.7 3.2 mΩ
- 7800 - pF - 1258 - pF - 782 - pF
- 25 -
ns
- 82 -
ns
- 86 -
ns
- 42 -
ns
- 170 - nC
- 52 - nC
- 68 - nC
- - 1.1 V
- 30.9 -
ns
- 27 - nC
Version1.0-2015.2
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TEST CIRCUIT AND WAVEFORM
Version1.0-2015.2
www.perfectway.cn
Version1.0-2015.2
www.perfectway.cn
RATINGAND CHARACTERISTIC CURVES
ID,Drain-to-Source Current(A)
320 20V
10V
6V
280 8V
7V
240
200
5.5V
160
120
80
Vgs=5V
40
0
0
1
2
3
4
5
VDS,Drain-to-Source Voltage(V)
100
TJ =150℃
TJ =25℃
10
ISD , Reverse Drain Current(A)
VDS , Drain-to-Source Brakdown Voltage(V)
1
VGS =0V 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS,Source-Drain Voltage(V)
140
120
100
80
60
40
20 -60 -40 -20 0 25 50 75 100 125 150 175 TJ , Junction Temperature(℃)
Version1.0-2015.2
RDS(on),Drain-to-Source On Resistance (Normalized)
Capacitance(pF)
VGS,Gate-to-Source Voltage(V)
10 8
VDS=20V
6
4
2
0 0 20 40 60 80 100 120 140 160 180 Qg ,Total Gate Charge(nC)
10000 Ciss
1000 Crss
Coss
100
10
0
10
100
VDS,Drain-to-Source Voltage(V)
12 ID=20A
2.5
2.0 VGS=10V
1.5
1.0
0.5
0 -75 -50 -25 0 25 50 75 100125 150 175
TJ , Junction Temperature(℃)
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ID, Drain Current(A)
EAS , Avalanche Energy(mJ)
Operation in this Area
Limited by RDS(on) 1000
IDM=Limited
100
100μs
Limited by RDS(on) 10
1ms
1 TC=25℃ TJ=150℃ Single Pulse
0.1
BVDSS Limited
0.1
1
10
VDS,Drain-to-Source Voltage(V)
10ms DC
100
750
600
450
300
150
0 25 50
75 100 125 150
TCH , Channel Temperature(Initial) (℃)
1
Duty Cycle = 0.5
VTH , Gate Threshold Voltage(V)
DS(ON) R , Rrain-Source On-Resistance (mΩ)
100 Common Source Tc=25℃ Pulse Test
10
VGS =4.5V
VGS =10V
1
0.1
1
10
100
ID, Drain Current(A)
5
4
3
2
Common Source 1 VDS=10V
ID=250uA Pulse Test 0
-80 -40 0 40
80 120 140
TC, Case Temperature(℃)
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Time(s)
Nomalized Effective Transient Thermal Impedance
Version1.0-2015.2
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PACKAGE OUTLINE DIMENSIONS
TO-252
B
L
C
I
2
N
H
A
PIN 1 3
D
J
G EM
F
aK
P
TO-252
Dim Min
Max
A .230(5.85) .246(6.25)
B .250(6.35) .264(6.75)
C .207(5.27) .218(5.54)
D .037(0.93) .045(1.14)
E .106(2.70) .138(3.50)
F .028(0.72) .033(0.84)
G .024(0.60) .041(1.05)
H .028(0.72) .043(1.10)
I .085(2.15) .096(2.45)
J .037(0.95) .047(1.20)
K .018(0.45) .026(0.65)
L .018(0.45) .024(0.60)
P .081(2.05) .094(2.40)
M .000(0.00) .006(0.15)
N
-- .00.