DatasheetsPDF.com

140N04DSL Dataheets PDF



Part Number 140N04DSL
Manufacturers PINGWEI
Logo PINGWEI
Description N-Channel MOSFET
Datasheet 140N04DSL Datasheet140N04DSL Datasheet (PDF)

140N04(G,D)SL 140 Amps,40 Volts N-CHANNEL MOSFET Featutes  140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A RDS(ON)MAX=3.2mΩ@VGS=4.5V/20A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-252 140N04GSL TO-251 140N04DSL Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junct.

  140N04DSL   140N04DSL


Document
140N04(G,D)SL 140 Amps,40 Volts N-CHANNEL MOSFET Featutes  140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A RDS(ON)MAX=3.2mΩ@VGS=4.5V/20A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-252 140N04GSL TO-251 140N04DSL Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds ID IDM EAS TJ,TSTG TL Thermal Characteristics Parameter Thermal resistance , Junction to Case Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) PD 140N04(G,D)SL 40 ±20 140 380 500 -55 to +150 260 140N04(G,D)SL 1.3 96 UNIT V A mJ ℃ ℃ Units ℃/W W Version1.0-2015.2 www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA Drain-Source On-State Resistance RDS(on) VGS=10V,ID=20A VGS=4.5V,ID=20A Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHZ Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) VDD=20V,ID=70A, Turn-On Rise Time tr RG=3.7Ω Turn-Off Delay Time td(off) VGS=10V (Note3,4) Turn-Off Fall Time tf Total Gate Charge Qg VDS=20V,ID=70A, Gate-Source Charge Qgs VGS=4.5V (Note3,4) Gate-Drain Charge Qgd Drain-Source Body Diode Charcteristics and Maximum Ratings Diode Forward Voltage VSD IS=20A,VGS=0V Reverse Recovery Time trr VGS=0V,IS=40A, Reverse Recovery Charge Qrr dIF/dt=100A/us,(Note3) Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=10V,L=0.5mH,Rg=25Ω, TJ=25℃. 3. dI/dt=200A/us,starting TJ=25℃.Pulse width≤300us;duty cycle≤2%. 4. Repetitive rating; pulse width limited by maximum junction temperature. Min Typ Max Units 40 - - V -- 1 uA - - 100 nA - - -100 nA 1.0 - 3.0 V - 2.3 2.8 mΩ - 2.7 3.2 mΩ - 7800 - pF - 1258 - pF - 782 - pF - 25 - ns - 82 - ns - 86 - ns - 42 - ns - 170 - nC - 52 - nC - 68 - nC - - 1.1 V - 30.9 - ns - 27 - nC Version1.0-2015.2 www.perfectway.cn TEST CIRCUIT AND WAVEFORM Version1.0-2015.2 www.perfectway.cn Version1.0-2015.2 www.perfectway.cn RATINGAND CHARACTERISTIC CURVES ID,Drain-to-Source Current(A) 320 20V 10V 6V 280 8V 7V 240 200 5.5V 160 120 80 Vgs=5V 40 0 0 1 2 3 4 5 VDS,Drain-to-Source Voltage(V) 100 TJ =150℃ TJ =25℃ 10 ISD , Reverse Drain Current(A) VDS , Drain-to-Source Brakdown Voltage(V) 1 VGS =0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS,Source-Drain Voltage(V) 140 120 100 80 60 40 20 -60 -40 -20 0 25 50 75 100 125 150 175 TJ , Junction Temperature(℃) Version1.0-2015.2 RDS(on),Drain-to-Source On Resistance (Normalized) Capacitance(pF) VGS,Gate-to-Source Voltage(V) 10 8 VDS=20V 6 4 2 0 0 20 40 60 80 100 120 140 160 180 Qg ,Total Gate Charge(nC) 10000 Ciss 1000 Crss Coss 100 10 0 10 100 VDS,Drain-to-Source Voltage(V) 12 ID=20A 2.5 2.0 VGS=10V 1.5 1.0 0.5 0 -75 -50 -25 0 25 50 75 100125 150 175 TJ , Junction Temperature(℃) www.perfectway.cn ID, Drain Current(A) EAS , Avalanche Energy(mJ) Operation in this Area Limited by RDS(on) 1000 IDM=Limited 100 100μs Limited by RDS(on) 10 1ms 1 TC=25℃ TJ=150℃ Single Pulse 0.1 BVDSS Limited 0.1 1 10 VDS,Drain-to-Source Voltage(V) 10ms DC 100 750 600 450 300 150 0 25 50 75 100 125 150 TCH , Channel Temperature(Initial) (℃) 1 Duty Cycle = 0.5 VTH , Gate Threshold Voltage(V) DS(ON) R , Rrain-Source On-Resistance (mΩ) 100 Common Source Tc=25℃ Pulse Test 10 VGS =4.5V VGS =10V 1 0.1 1 10 100 ID, Drain Current(A) 5 4 3 2 Common Source 1 VDS=10V ID=250uA Pulse Test 0 -80 -40 0 40 80 120 140 TC, Case Temperature(℃) 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Time(s) Nomalized Effective Transient Thermal Impedance Version1.0-2015.2 www.perfectway.cn PACKAGE OUTLINE DIMENSIONS TO-252 B L C I 2 N H A PIN 1 3 D J G EM F aK P TO-252 Dim Min Max A .230(5.85) .246(6.25) B .250(6.35) .264(6.75) C .207(5.27) .218(5.54) D .037(0.93) .045(1.14) E .106(2.70) .138(3.50) F .028(0.72) .033(0.84) G .024(0.60) .041(1.05) H .028(0.72) .043(1.10) I .085(2.15) .096(2.45) J .037(0.95) .047(1.20) K .018(0.45) .026(0.65) L .018(0.45) .024(0.60) P .081(2.05) .094(2.40) M .000(0.00) .006(0.15) N -- .00.


140N04GSL 140N04DSL 2N60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)