N-Channel MOSFET
2N60(F,B,H,G,D)
2A mps,600 Volts N-CHANNEL MOSFET
FEATURE
2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss...
Description
2N60(F,B,H,G,D)
2A mps,600 Volts N-CHANNEL MOSFET
FEATURE
2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 2N60
ITO-220AB 2N60F
TO-262 2N60H
TO-263 2N60B
TO-252 2N60G
TO-251 2N60D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N60 600 ±30 2 8 120 2.0 5.4 4.5 -55 to +150
260
10 1.1
UNIT
V
A mJ A mJ V/ns ℃
℃
lbf·in N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case Maximum Power Dissipation
TC=25℃
Symbol
RthJC PD
ITO-220
4 32
TO-220
2 62
TO-262 TO-263
2 62
TO-251 TO-252
6 21
Units
℃/W W
- -
Rev. 14-1 http:// www.perfectway.cn
Electrical Characteristics (TC=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃,
/ΔTJ
ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Gate-Body Leakage Current, Forward
IGSSF
VGS=30V, VDS=0V
Gate-Body Leak...
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