2N60G

2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 2N60 600 ±30 2 8 120 2.0 5.4 4.5 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol RthJC PD ITO-220 4 32 TO-220 2 62 TO-262 TO-263 2 62 TO-251 TO-252 6 21 Units ℃/W W - - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (TC=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃， /ΔTJ ID=250μA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Gate-Body Leakage Current, Forward IGSSF VGS=30V, VDS=0V Gate-Body Leak...