N-Channel MOSFET. 6N70HS Datasheet

6N70HS MOSFET. Datasheet pdf. Equivalent


PINGWEI 6N70HS
6N70(F,B,H,G,D)S
6 Amps,700 Volts Super Junction N-CHANNEL MOSFET
FEATURE
6A,700V,RDS(ON)MAX=0.95Ω @VGS=10V/3A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
6N70S
ITO-220AB
6N70FS
TO-262
6N70HS
TO-263
6N70BS
TO-252
6N70GS
TO-251
6N70DS
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
6N70(F,B,H,G,D)S
700
±30
6
24
135
2.5
0.4
48
-55to+150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(J-c)
Rth(ch-c)
Rth(ch-a)
PD
ITO-220
3.0
3.0
80
57
TO-220/TO-262/
TO-263
1.8
1.8
62
70
TO-251/252
1.8
1.8
62
70
Units
/W
/W
/W
W
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6N70HS Datasheet
Recommendation 6N70HS Datasheet
Part 6N70HS
Description N-Channel MOSFET
Feature 6N70HS; 6N70(F,B,H,G,D)S 6 Amps,700 Volts Super Junction N-CHANNEL MOSFET FEATURE  6A,700V,RDS(ON)MAX=0..
Manufacture PINGWEI
Datasheet
Download 6N70HS Datasheet




PINGWEI 6N70HS
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=700V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=3A
VDS=50V,VGS=0V,
f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
td(on)
VDD=380V,ID=3A,
tr
RG=18Ω
td(off)
(Note4,5)
tf
Qg
VDS=480V,ID=6A,
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
IS=6A,VGS=0V
trr
VGS=0V,IS=6A,
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature .
2. VDD=50V,L=7.5mH,Rg=25Ω ,IAS=6A , starling,TJ=25.
3. ISDID,dI/dt=_A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
700
V
0.63 V/
10 μ A
1
μA
-1
μA
2
--
4
V
0.84 0.95
Ω
460
pF
45
pF
3.5
pF
6
ns
3
ns
50 60
ns
9
15
ns
10
20
nC
1.6
nC
4
nC
6
A
24
A
- - 1.3
V
250
ns
2.2 μ C
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PINGWEI 6N70HS
TEST CIRCUIT AND WAVEFORM
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