Document
6N70(F,B,H,G,D)S
6 Amps,700 Volts Super Junction N-CHANNEL MOSFET
FEATURE
6A,700V,RDS(ON)MAX=0.95Ω @VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 6N70S
ITO-220AB 6N70FS
TO-262 6N70HS
TO-263 6N70BS
TO-252 6N70GS
TO-251 6N70DS
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
6N70(F,B,H,G,D)S 700 ±30 6 24 135 2.5 0.4 48
-55to+150
260
10 1.1
UNIT
V
A
mJ A mJ V/ns ℃ ℃ lbf·in N·m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol
Rth(J-c) Rth(ch-c) Rth(ch-a)
PD
ITO-220
3.0 3.0 80 57
TO-220/TO-262/ TO-263 1.8 1.8 62 70
TO-251/252
1.8 1.8 62 70
Units
℃/W ℃/W ℃/W
W
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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse
BVDSS ΔBVDSS
/ΔTJ IDSS IGSSF IGSSR
On Characteristics
Gate-Source Threshold Voltage Drain-Source On-State Resistance
VGS(th) RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA Reference to 25℃, ID=250uA VDS=700V,VGS=0V VGS=30V,VDS=0V VGS=-30V,VDS=0V
VDS=VGS,ID=250uA VGS=10V,ID=3A
VDS=50V,VGS=0V, f=1.0MHZ
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge
td(on)
VDD=380V,ID=3A,
tr
RG=18Ω
td(off)
(Note4,5)
tf
Qg
VDS=480V,ID=6A,
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current Pulsed Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IS
ISM
VSD
IS=6A,VGS=0V
trr
VGS=0V,IS=6A,
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature . 2. VDD=50V,L=7.5mH,Rg=25Ω ,IAS=6A , starling,TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
700 -
-
V
- 0.63 - V/℃
-
-
10 μ A
-
-
1
μA
-
-
-1
μA
2
--
4
V
- 0.84 0.95
Ω
- 460 -
pF
- 45 -
pF
- 3.5 -
pF
-
6
-
ns
-
3
-
ns
- 50 60
ns
-
9
.