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6N70GS Dataheets PDF



Part Number 6N70GS
Manufacturers PINGWEI
Logo PINGWEI
Description N-Channel MOSFET
Datasheet 6N70GS Datasheet6N70GS Datasheet (PDF)

6N70(F,B,H,G,D)S 6 Amps,700 Volts Super Junction N-CHANNEL MOSFET FEATURE  6A,700V,RDS(ON)MAX=0.95Ω @VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N70S ITO-220AB 6N70FS TO-262 6N70HS TO-263 6N70BS TO-252 6N70GS TO-251 6N70DS Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanch.

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6N70(F,B,H,G,D)S 6 Amps,700 Volts Super Junction N-CHANNEL MOSFET FEATURE  6A,700V,RDS(ON)MAX=0.95Ω @VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N70S ITO-220AB 6N70FS TO-262 6N70HS TO-263 6N70BS TO-252 6N70GS TO-251 6N70DS Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 6N70(F,B,H,G,D)S 700 ±30 6 24 135 2.5 0.4 48 -55to+150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Thermal resistance , Junction to Case Thermal resistance , Channel to Case Thermal resistance , Channel to Ambient Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) Rth(ch-c) Rth(ch-a) PD ITO-220 3.0 3.0 80 57 TO-220/TO-262/ TO-263 1.8 1.8 62 70 TO-251/252 1.8 1.8 62 70 Units ℃/W ℃/W ℃/W W http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage Breakdown Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR On Characteristics Gate-Source Threshold Voltage Drain-Source On-State Resistance VGS(th) RDS(on) Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Test Conditions VGS=0V,ID=250uA Reference to 25℃, ID=250uA VDS=700V,VGS=0V VGS=30V,VDS=0V VGS=-30V,VDS=0V VDS=VGS,ID=250uA VGS=10V,ID=3A VDS=50V,VGS=0V, f=1.0MHZ Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge td(on) VDD=380V,ID=3A, tr RG=18Ω td(off) (Note4,5) tf Qg VDS=480V,ID=6A, Qgs VGS=10V, (Note4,5) Gate-Drain Charge Qgd Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current Pulsed Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD IS=6A,VGS=0V trr VGS=0V,IS=6A, Qrr dIF/dt=100A/us, (Note4) Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature . 2. VDD=50V,L=7.5mH,Rg=25Ω ,IAS=6A , starling,TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature. Min Typ Max Units 700 - - V - 0.63 - V/℃ - - 10 μ A - - 1 μA - - -1 μA 2 -- 4 V - 0.84 0.95 Ω - 460 - pF - 45 - pF - 3.5 - pF - 6 - ns - 3 - ns - 50 60 ns - 9 .


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