N-Channel MOSFET. 70N03G Datasheet

70N03G MOSFET. Datasheet pdf. Equivalent


PINGWEI 70N03G
70N03G
70 Amps,30 Volts N-CHANNEL MOSFET
Featutes
70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25
Symbol
Rth(J-c)
PD
70N03G
30
±20
70
210
200
70
-55 to +150
260
TO-263
1.8
83
UNIT
V
A
mJ
A
Units
/W
W
Version1.0-2015.2
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70N03G Datasheet
Recommendation 70N03G Datasheet
Part 70N03G
Description N-Channel MOSFET
Feature 70N03G; 70N03G 70 Amps,30 Volts N-CHANNEL MOSFET Featutes  70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A  Low gat.
Manufacture PINGWEI
Datasheet
Download 70N03G Datasheet




PINGWEI 70N03G
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Mix
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=250uA
30
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Reference to 25℃ ,
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
0.5
Drain-Source On-State Resistance
RDS(on) VGS=10V,ID=30A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=15V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=15V,ID=20A
Turn-On Rise Time
tr
RG=1.5Ω
Turn-Off Delay Time
td(off)
VGS=10V (Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=20V,ID=12A,
Gate-Source Charge
Qgs
VGS=4.5V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=70A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4,5)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. L=0.1mH,Rg=25Ω,IAS=70A , starting TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Typ Max
--
0.021
1
100
-100
2.5
5.5 6.5
3075
400
315
11.2
49
35
7.8
31.6
6.07
13.8
70
210
1
32
12
Units
V
V/
uA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
uC
Version1.0-2015.2
www.perfectway.cn



PINGWEI 70N03G
TEST CIRCUIT AND WAVEFORM
Version1.0-2015.2
www.perfectway.cn







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