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N-Channel MOSFET. 70N03G Datasheet |
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70N03G
70 Amps,30 Volts N-CHANNEL MOSFET
Featutes
70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25℃
Symbol
Rth(J-c)
PD
70N03G
30
±20
70
210
200
70
-55 to +150
260
TO-263
1.8
83
UNIT
V
A
mJ
A
℃
℃
Units
℃/W
W
Version1.0-2015.2
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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Mix
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=250uA
30
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Reference to 25℃ ，
－
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
－
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
－
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
－
On Characteristics
Gate-Source Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
0.5
Drain-Source On-State Resistance
RDS(on) VGS=10V,ID=30A
－
Dynamic Characteristics
Input Capacitance
Ciss
VDS=15V,VGS=0V,
－
Output Capacitance
Coss
f=1.0MHZ
－
Reverse Transfer Capacitance
Crss
－
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=15V,ID=20A
－
Turn-On Rise Time
tr
RG=1.5Ω
－
Turn-Off Delay Time
td(off)
VGS=10V (Note4,5)
－
Turn-Off Fall Time
tf
－
Total Gate Charge
Qg
VDS=20V,ID=12A,
－
Gate-Source Charge
Qgs
VGS=4.5V, (Note4,5)
－
Gate-Drain Charge
Qgd
－
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
－
Pulsed Diode Forward Current
ISM
－
Diode Forward Voltage
VSD
IS=1A,VGS=0V
－
Reverse Recovery Time
trr
VGS=0V,IS=70A,
－
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4,5)
－
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. L=0.1mH,Rg=25Ω,IAS=70A , starting TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Typ Max
－－
0.021 －
－
1
－ 100
－ -100
－ 2.5
5.5 6.5
3075 －
400 －
315 －
11.2 －
49
－
35
－
7.8 －
31.6 －
6.07 －
13.8 －
－ 70
－ 210
－
1
32 －
12 －
Units
V
V/℃
uA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
uC
Version1.0-2015.2
www.perfectway.cn
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TEST CIRCUIT AND WAVEFORM
Version1.0-2015.2
www.perfectway.cn
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