Power MOSFET. 4N65G Datasheet

4N65G MOSFET. Datasheet pdf. Equivalent


UTC 4N65G
UNISONIC TECHNOLOGIES CO., LTD
4N65
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65 is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristic. This power
MOSFET is usually used in high speed switching applications
including power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
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Copyright © 2017 Unisonic Technologies Co., Ltd
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4N65G Datasheet
Recommendation 4N65G Datasheet
Part 4N65G
Description N-Channel Power MOSFET
Feature 4N65G; UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a .
Manufacture UTC
Datasheet
Download 4N65G Datasheet




UTC 4N65G
4N65
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
Packing
4N65L-TA3-T
4N65G-TA3-T
TO-220 G D S - - - - -
Tube
4N65L-TF1-T
4N65G-TF1-T
TO-220F1 G D S - - - - -
Tube
4N65L-TF2-T
4N65G-TF2-T
TO-220F2 G D S - - - - -
Tube
4N65L-TF3-T
4N65G-TF3-T
TO-220F G D S - - - - -
Tube
4N65L-TF3T-T
4N65G-TF3T-T
TO-220F3 G D S - - - - -
Tube
4N65L-TM3-T
4N65G-TM3-T
TO-251 G D S - - - - -
Tube
4N65L-TMS-T
4N65G-TMS-T
TO-251S G D S - - - - -
Tube
4N65L-TMS2-T
4N65G-TMS2-T
TO-251S2 G D S - - - - -
Tube
4N65L-TMS4-T
4N65G-TMS4-T
TO-251S4 G D S - - - - -
Tube
4N65L-TN3-R
4N65G-TN3-R
TO-252 G D S - - - - - Tape Reel
4N65L-TND-R
4N65G-TND-R
TO-252D G D S - - - - - Tape Reel
4N65L-T2Q-T
4N65G-T2Q-T
TO-262 G D S - - - - -
Tube
4N65L-TQ2-R
4N65G-TQ2-R
TO-263 G D S - - - - - Tape Reel
4N65L-TQ2-T
4N65G-TQ2-T
TO-263 G D S - - - - -
Tube
4N65G-K08-5060-R
4N65G-K08-5060-R DFN5060-8 S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
4N65G-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN5060-8
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
MARKING
DFN5060-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC 4N65G
4N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note2)
Drain Current
Continuous
Pulsed (Note2)
Avalanche Energy
Single Pulsed (Note3)
Repetitive (Note2)
Peak Diode Recovery dv/dt (Note4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
650
V
±30
V
4.4
A
4.0
A
16
A
260
mJ
10.6
mJ
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
TO-220F3
35
W
Power Dissipation
TO-220F2
TO-251/ TO-251S
PD
TO-251S2/TO-251S4
TO-252/TO-252D
36
W
50
W
DFN5060-8
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD4.4A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN5060-8
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN5060-8
SYMBOL
θJA
θJC
RATINGS
62.5
110
75
1.18
3.5
3.4
2.5
4.17
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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