Document
NEW PRODUCT
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
Pin Assignments
The 74AHCT1G126 is a single non-inverting buffer/bus driver with a 3-state output. The output enters a high impedance state when a LOW-level is applied to the output enable (OE) pin. The device is designed for operation with a power supply range of 4.5V to 5.5V.
(Top View)
OE 1
5 Vcc
A2
GND 3
4Y
SOT25 / SOT353
Features
• Supply Voltage Range from 4.5V to 5.5V • ± 8 mA Output Drive at 5.0V • CMOS low power consumption • Schmitt Trigger Action at All Inputs Make the Circuit
Tolerant for Slower Input Rise and Fall Time. • ESD Protection per JESD 22
o Exceeds 200-V Machine Model (A115-A) o Exceeds 2000-V Human Body Model (A114-A) o Exceeds 1000-V Charged Device Model (C101C) • Latch-Up Exceeds 100mA per JESD 78, Class II • SOT25 and SOT353: Assembled with “Green” Molding Compound (no Br, Sb) • Lead Free Finish / RoHS Compliant (Note 1)
Applications
• General Purpose Logic • Wide array of products such as:
o PCs, networking, notebooks, netbooks, PDAs o Computer peripherals, hard drives, CD/DVD ROM o TV, DVD, DVR, set top box o Phones, Personal Navigation / GPS o MP3 players ,Cameras, Video Recorders
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.
74AHCT1G126
Document number: DS35187Rev. 1 - 2
1 of 9 www.diodes.com
May 2011
© Diodes Incorporated
NEW PRODUCT
Pin Descriptions
Pin Name OE A GND Y VCC
Pin No. 1 2 3 4 5
Logic Diagram
1 OE
2 A
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description Output Enable
Data Input Ground
Data Output Supply Voltage
4 Y
Function Table
Inputs
OE
A
H
H
H
L
L
X
Output Y H L Z
74AHCT1G126
Document number: DS35187Rev. 1 - 2
2 of 9 www.diodes.com
May 2011
© Diodes Incorporated
NEW PRODUCT
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Absolute Maximum Ratings (Note 2)
Symbol
Description
Rating
Unit
ESD HBM Human Body Model ESD Protection
2
KV
ESD CDM Charged Device Model ESD Protection
1
KV
ESD MM
Machine Model ESD Protection
200
V
VCC
Supply Voltage Range
-0.5 to 6.5
V
VI
Input Voltage Range
-0.5 to 6.5
V
VO
Voltage applied to output in high or low state
-0.5 to VCC +0.5
V
IIK
Input Clamp Current VI<0
-20
mA
IOK
Output Clamp Current (VO < 0 or VO > VCC)
±20
mA
IO
Continuous output current (VO = 0 to VCC)
±25
mA
ICC
Continuous current through VCC
50
mA
IGND
Continuous current through GND
-50
mA
TJ
Operating Junction Temperature
-40 to 150
°C
TSTG
Storage Temperature
-65 to 150
°C
Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values.
Recommended Operating Conditions (Note 3)
Symbol VCC VIH VIL VI VO IOH IOL
Δt/ΔV
TA
Operating Voltage High-level Input Voltage Low-level input voltage Input Voltage Output Voltage High-level output current Low-level output current Input transition rise or fall rate Operating free-air temperature
Parameter
Notes: 3. Unused inputs should be held at VCC or Ground.
Min
Max
Unit
4.5
5.5
V
2.0
V
0.8
V
0
5.5
V
0
VCC
V
-8
mA
8
mA
20
ns/V
-40
125
ºC
74AHCT1G126
Document number: DS35187Rev. 1 - 2
3 of 9 www.diodes.com
May 2011
© Diodes Incorporated
NEW PRODUCT
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
Symbol Parameter Test Conditions
VOH
High Level
IOH = -50μA
Output Voltage IOH = -8mA
VCC 4.5V 4.5V
25ºC
-40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
4.4 4.5
4.4
4.4
V
3.94
3.8
3.70
VOL
Low Level
IOL = 50μA
Output Voltage IOL = 8mA
4.5V 4.5V
0 0.1
0.1
0.36
0.44
0.1 V
0.55
II Input Current VI = 5.5V or GND 0 to 5.5V
± 0.1
±1
±2
μA
Z State IOZ Leakage
Current
VO =0 to 5.5V
5.5V
0.25
2.5
10
μA
ICC
Supply Current VI = 5.5V or GND IO=0
5.5V
1
10
Ci
Input Capacitance
VI = VCC – or GND
5.5V
2.0 10
10
ΔICC
One input at 3.4
Additional Supply Current
V Other inputs at
VCC or GND
5.5V
1.35
1.5
Thermal
θJA
Resistance Junction-to-
Ambient
SOT25 SOT353
204 (Note 4)
371
Thermal Resistance θJC Junction-toCase
SOT25 SOT353
52 (Note 4)
143
40
μA
10
pF
mA
oC/W
oC/W
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AHCT1G126
Document number: DS35187Rev. 1 - 2
4 of 9 www.diodes.com
May 2011
© Diodes Incorporated
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Switching Characteristics
VCC = 5V ± 0.5V (see Figure 1)
Parameter
From (Input)
TO (OUTPUT)
25ºC Min Typ. Max
tpd
A
Y
CL=15pF 0.6
3.4
5.5
CL=50pF 0.6
4.7
7.5
ten
OE
Y
CL=15pF 0.6
3.6
5.6
CL=50pF 0.6
5.4
8.0
tdis
OE
Y
CL=15pF 0.6
4.3
6.8
CL=50pF 0.6
6.1
8.8
-40.