2SC1060

isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION ·With TO-220 package ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 V(BR)CBO Collector-base breakdown voltage IC =5mA ; IE=0 V(BR)EBO Emitter-base breakdown voltage IE =5mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V ICBO Collector Cutoff Current VCB= 20V; IB=0 IEBO Emitter Cutoff Current VEB= 4V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 5A ; VCE= 2V  hFE Classifica...