isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lo...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This
transistor is ideal for audio frequency amplifier and
switching especially in hybrid integrated circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
PC
Collector Power Dissipation @Ta=25℃ NOTE2
TJ
Junction Temperature
7
A
2
W
150
℃
Tstg
Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted
-55~150
℃
2SC3518
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= 2A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= 5A; VCE= 1V
hFE-2NOTE
DC Current Gain
IC= 2A; VCE= 1V
fTNOTE
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= 500mA; VCE= 10V
hFE-2 Classifications
M
L
K
100-200 160-320 200-400
2SC3518
MIN TYP. MAX UNIT
0.3
V
1.2
V...
