MBRF1645

Schottky Barrier Rectifier FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Plastic Material：UL Flammability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ 45 V 16 A Peak Repetitive Forward Current IFRM (Rated VR,Square Wave,20kHz) TC= 125℃ 32 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10000 V/μs MBRF1645 1m isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBRF1645 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 16A ; TC= 25℃ IF= 16A ; TC= 125℃ IR Maximum Instantaneous R...