isc N-Channel MOSFET Transistor
AOD1N60
FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Mi...
isc N-Channel MOSFET
Transistor
AOD1N60
FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
1.3
A
IDM
Drain Current-Single Pluse
4
A
PD
Total Dissipation @TC=25℃
45
W
TJ
Max. Operating Junction Temperature -50~150 ℃
Tstg
Storage Temperature
-50~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.8
℃/W
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isc N-Channel MOSFET
Transistor
AOD1N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=0.65A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS= 600V; VGS= 0 VDS= 480V; VGS= 0@TJ=125℃
IS= 1A; VGS= 0
MIN MAX UNIT
600
V
3.0
5.0
V
9.0
Ω
±100 nA
1 10
μA
1
V
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