isc N-Channel MOSFET Transistor
AOD7S60
FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min)...
isc N-Channel MOSFET
Transistor
AOD7S60
FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pluse
33
A
PD
Total Dissipation @TC=25℃
83
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.2
℃/W
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isc N-Channel MOSFET
Transistor
AOD7S60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
MIN TYPE MAX UNIT
600
V
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=3.5A VGS= 10V; ID=3.5A@TJ=150℃
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0 VDS= 480V; VGS= 0@TJ=150℃
VSD
Forward On-Voltage
IS= 3.5A; VGS= 0
2.7
3.9
V
0.6 1.64
Ω
±100 nA
10
1
μA
0.82
V
...