AOD7S65

isc N-Channel MOSFET Transistor AOD7S65 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.0 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 89 W TJ Max. Operating Junction Temperature -50~150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOD7S65 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA MIN TYPE MAX UNIT 650 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance VDS= VGS; ID= 0.25mA VGS= 10V; ID=3.5A VGS= 10V; ID=3.5A@TJ=150℃ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=650V; VGS= 0 VDS=520V; VGS= 0@TJ=150℃ VSD Forward On-Voltage IS= 3.5A; VGS= 0 2.6 4.0 V 0.65 1.64 Ω ±100 nA 10 1 μA 0.82 ...