AOD9N50

AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ 9A < 0.86Ω Top View TO252 DPAK Bottom View Top View TO251A IPAK Bottom View D D S G S S D G G D S G G AOD9N50 AOI9N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain CurrentB TC=25°C TC=100°C ID 9 5.7 Pulsed Drain Current C IDM 27 Avalanche Current C IAR 3.8 Repetitive avalanche energy C EAR 216 Single pulsed avalanche energy H EAS 433 Peak diode recovery dv/dt dv/dt 5 TC=25°C Power Dissipation B Derate above 25oC PD 178 1.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 0.5 Maximum 55 0.5 0.7 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev...