AOD413A

isc P-Channel MOSFET Transistor AOD413A FEATURES ·Drain Current –ID= -12A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -12 A IDM Drain Current-Single Pluse -30 A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor AOD413A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VDS= VGS; ID= -0.25mA VGS= -10V; ID=-12A VGS= -10V; ID=-12A@TJ=125℃ VGS= ±20V;VDS= 0 VDS=-40V; VGS= 0 VDS=-40V; VGS= 0@TJ=55℃ IS= -1A; VGS= 0 MIN MAX UNIT -40 V -1.7 -3.0 V 44 65 mΩ ±100 nA -1 -5 μA -1 V NOTIC...